Western Civilization: Volume B: 1300 to 1815 by Jackson J. Spielvogel

By Jackson J. Spielvogel

Best-selling ebook WESTERN CIVILIZATION has helped over 1000000 clients find out about the current through exploring the previous. Jackson Spielvogel's attractive, chronological narrative weaves the political, fiscal, social, non secular, highbrow, cultural, and army features of background right into a gripping tale that's as memorable because it is instructive. The transparent narrative of a unmarried proficient writer makes it effortless to stick to the tale of Western civilization.

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The resulting SiP can contain up to six ICs, with a height less than a millimeter. In these two techniques, each plane of the stack is designed and fabricated without any constraints imposed by the assembly process of the SiP, as the vertical interconnects are implemented on one face of the plane and not through the plane. Alternatively, the vertical interconnects are implemented with copper bumps and electrodes formed through the stacked circuits within the SiP [60]. The stacked die are aggressively thinned to a thickness of 50 mm, and copper (Cu) electrodes with a 20-mm pitch are formed.

In addition, power delivery to the upper planes is realized with n FIGURE 3-12 Inductively coupled 3-D ICs. The galvanic connections are used for power delivery [100]. Gnd Vdd 56 CHAPTER 3 3-D Integrated Circuit Fabrication Technologies galvanic connections. Consequently, the fabrication process and cost for this type of 3-D IC is not greatly simplified as the via formation step is not eliminated. 4 VERTICAL INTERCONNECTS FOR 3-D ICs Increasing the number of planes that can be integrated into a single 3-D system is a primary objective of three-dimensional integration.

A portion of these bumps is deposited on the edge of the interplane vias, providing enhanced electrical connection between the planes. An epoxy filler can also be used to reinforce the bonding structure. An issue that arises in this case, however, is that the resin can result in bonding failure due to differences in the height of the metal bumps. To avoid such failures, pyramid- or conic-shaped bumps have been proposed [92]. Table 3-2 Several materials used for wafer bonding. Polymer Poly aryl ethel (FLARE) [93] Methylsilesequionexane (MSSQ) [94] Benzocyclobutene (BCB) [95] Hydrogensilsesquioxane (HSQ) [96] Parylene-N [97] 52 CHAPTER 3 3-D Integrated Circuit Fabrication Technologies n FIGURE 3-10 Metal-to-metal bonding: (a) square bumps and (b) conic bumps for improved bonding quality [92].

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